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參數(shù)資料
| 型號(hào)： | DR756 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Passivated Rectifier 50 - 1000 Volts 6 Amp Glass |
| 中文描述： | 6 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, R-6, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | DR756 |
DR750
THRU
DR7510
Passivated Rectifier
50 - 1000 Volts
R-6
Features
Low Cost
High Current Capability
High Surge Current Capability
Low Leakage
DIMENSIONS
INCHES
MIN
.340
.340
.048
1.000
MM
DIM
A
B
C
D
MAX
.360
.360
.052
---
MIN
8.60
8.60
1.20
25.40
MAX
9.10
9.10
1.30
---
NOTE
Maximum Ratings
Operating Temperature: -50
°
C to +150
°
C
Storage Temperature: -50
°
C to +150
°
C
Maximum Thermal Resistance; 10
°
C/W Junction To Ambient
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
DR750
DR751
DR752
DR754
DR756
DR758
DR7510
--- 50V
--- 100V
--- 200V
--- 400V
--- 600V
--- 800V
--- 1000V
35V
70V
140V
280V
420V
560V
700V
50V
100V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
*Pulse test: Pulse width 300
μ
sec, Duty cycle 1%
I
F(AV)
6.0A
T
A
= 60
°
C
I
FSM
200A
8.3ms, half sine
V
F
1.1V
I
FM
= 6.0A;
T
J
= 25
°
C*
I
R
10
μ
A
1mA
T
J
= 25
°
C
T
J
= 100
°
C
C
J
100pF
Measured at
1.0MHz, V
R
=4.0V
A
B
D
D
C
Cathode
Mark
www.
mc c semi
.c om
6 Amp Glass
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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