- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295501 > DPS256X32V3-85M (TWILIGHT TECHNOLOGY INC) 256K X 32 MULTI DEVICE SRAM MODULE, 85 ns, CPGA66 PDF資料下載
參數(shù)資料
| 型號： | DPS256X32V3-85M |
| 廠商： | TWILIGHT TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 32 MULTI DEVICE SRAM MODULE, 85 ns, CPGA66 |
| 封裝： | 1.090 X 1.090 INCH, 0.400 INCH HEIGHT, VERSA STACK, CERAMIC, PGA-66 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 695K |
| 代理商： | DPS256X32V3-85M |
DPS256X32V3
Dense-Pac Microsystems, Inc.
RECOMMENDED OPERATING RANGE 3
Symbol
Characteristic
Min. Typ.
Max.
Unit
VDD
Supply Voltage
4.5
5.0
5.5
V
VIH
Input HIGH Voltage 2.2
VDD+0.3 V
VIL
Input LOW Voltage -0.52
0.8
V
TA
Operating
Temperature
M/B
-55 +25
+125
oC
I
-40 +25
+85
C
0
+25
+70
TRUTH TABLE
Mode
SEL
CE
WE
OE I/O Pin Supply
Current
Not Selected
L
X
High-Z Standby
Not Selected
X
H
X
High-Z Standby
DOUT Disable
H
L
H
High-Z Active
Read
H
L
H
L
DOUT
Active
Write
H
L
X
DIN
Active
H = HIGH
L = LOW
X = Don’t
DC OUTPUT CHARACTERISTICS
Symbol
Parameter
Conditions
Min. Max. Unit
VOH
HIGH Voltage
IOH= -1.0mA 2.4
V
VOL
LOW Voltage
IOL=2.1mA
0.4
V
ABSOLUTE MAXIMUM RATINGS 3
Symbol
Parameter
Value
Unit
TSTC
Storage Temperature
-65 to +150
°C
TBIAS
Temperature Under Bias
-55 to +125
°C
VDD
Supply Voltage 1
-0.5 to +7.0
°C
VI/O
Input/Output Voltage 1
-0.5 to VDD+0.5
V
DC OPERATING CHARACTERISTICS: Over operating ranges
Symbol
Characteristics
Test Conditions
Typ.
()
C
I
M/B
Unit
Min.
Max.
Min.
Max.
Min.
Max.
IIN
Input
Leakage Current
VIN = 0V to VDD
-
-20
+20
-20
+20
-20
+20
A
IOUT
Output
Leakage Current
VI/O = 0V to VDD,
CE or OE = VIH, or WE = VIL
-
-5
+5
-5
+5
-5
+5
A
ICC1
Active
Supply Current
CE = VIL,
VIN = VIH or VIL,
IOUT = 0mA
X8
25
60
70
75
mA
X16
35
90
110
120
X32
65
155
195
215
ICC2
Operating
Supply Current
Cycle=min.,
Duty=100%
IOUT = 0mA
X8
55
95
100
105
mA
X16
95
160
170
180
X32
185
295
315
335
ISB1
Full Standby Supply
Current (CMOS)
VIN≥VDD-0 .2V or
VIN
≤VSS+0.2V
0.016
0.8
1.6
4.0
mA
ISB2
Standby Current (TTL)
CE = VIH
8
24
mA
IDR3
Data Retention
Supply Current (3.0V)
VDR = 3.0V, CE ≥ VDR -0.2V,
SEL
≥ VDR -0.2V or SEL ≤ +0.2V
8
400
800
3200
A
IDR2
Data Retention Supply
Current (2.0V)
VDR = 2.0V, CE
≥ VDR -0.2V,
SEL
≥ VDR -0.2V or SEL +0.2V
8
360
680
2800
A
VOL
Output Low Voltage
IOUT = 2.1mA
-
0.4
V
CAPACITANCE 4:
TA = 25°C, F = 1.0MHz
Symbol
Parameter
Max.
Unit
Condition
CADR Address Input
100
pF
VIN2 = 0V
CCE
Chip Enable
30
CSEL
Active High
Chip Select
40
CWE
Write Enable
50
COE
Output Enable
90
CI/O
Data Input/Output
30
30A044-00
REV. E
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DPS2ME16MKH3-35B | 2M X 16 MULTI DEVICE SRAM MODULE, 35 ns, QMA52 |
| DPS2ME16MKH3-45I | 2M X 16 MULTI DEVICE SRAM MODULE, 45 ns, QMA52 |
| DPS2ME16MKI3-25M | 2M X 16 MULTI DEVICE SRAM MODULE, 25 ns, QMA52 |
| DPS384-15I | 128K X 3 MULTI DEVICE SRAM MODULE, 15 ns, SMA40 |
| DPS512X16A3-15B | 512K X 16 MULTI DEVICE SRAM MODULE, 150 ns, CPGA50 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DPS256X32W-12C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| DPS256X32W-15C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| DPS256X32W-17C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| DPS256X32W-20C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| DPS256X32W-25C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。