參數(shù)資料
型號： DP100S
廠商： AUK Corp
英文描述： PNP Silicon Transistor
中文描述： 進步黨硅晶體管
文件頁數(shù)： 2/3頁
文件大小： 47K
代理商： DP100S
KST-2118-000
2
DP100S
Absolute maximum ratings
(Ta=25
°
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
-15
V
Collector-Emitter voltage
-12
V
Emitter-Base voltage
- 5
V
Collector current
- 1
A
Collector dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
-55~ 150
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
= -50
μ
A, I
E
= 0
-15
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
= -1mA, I
B
= 0
-12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
= -50
μ
A, I
C
= 0
-5
-
-
V
Collector cut-off current
I
CBO
V
CB
= -12V, I
E
= 0
-
-
-0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
= 0
-
-
-0.1
μ
A
h
FE1
V
CE
= -1V, I
C
= -100mA
200
-
450
-
DC current gain
h
FE2
V
CE
= -1V, I
C
= -1A
70
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
= -400mA, I
B
= -20mA
-
-
-0.3
V
Base-Emitter saturation voltage
V
BE(sat)
I
C
= -400mA, I
B
= -20mA
-
-
-1.2
V
Transition frequency
f
T
V
CE
= -5V, I
C
= -50mA
-
330
-
MHz
Collector output capacitance
C
ob
V
CB
= -10V, I
E
= 0, f= 1MHz
-
9
-
pF
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