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參數(shù)資料
| 型號： | DNBT8105 |
| 廠商： | Diodes Inc. |
| 英文描述： | 1A NPN SURFACE MOUNT TRANSISTOR |
| 中文描述： | 第1A npn型表面貼裝晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 180K |
| 代理商： | DNBT8105 |
DS30513 Rev. 7 - 2
2 of 4
DNBT8105
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
80
60
5
V
V
V
nA
nA
nA
I
C
= 100
m
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100
m
A, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CES
= 60V
V
EB
= 4V, I
C
= 0
100
100
100
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
100
100
80
30
300
V
I
C
= 1mA, V
= 5V
I
C
= 500mA, V
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
I
C
= 500mA, I
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, V
CE
= 5V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.25
0.5
1.1
1.0
V
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
V
BE(SAT)
V
BE(ON)
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
10
pF
V
CB
= 10V, f = 1.0MHz
V
= 10V, I
C
= 50mA,
f = 100MHz
Current Gain-Bandwidth Product
f
T
150
MHz
Note: 4. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
@ T
A
= 25
°
C unless otherwise specified
0
50
100
25
50
75
100
125
150
175
200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
400
0
Note 1
h
, DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 2, DC Current Gain vs. Collector Current
T = 125oC
A
T = 85oC
A
V
= 5V
CE
T = 25oC
A
T = -55oC
A
1
10
1000
10,000
100
0
100
150
200
50
350
300
250
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DNBT8105_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:1A NPN SURFACE MOUNT TRANSISTOR |
| DNBT8105_11 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:1A NPN SURFACE MOUNT TRANSISTOR |
| DNBT8105-7 | 功能描述:兩極晶體管 - BJT 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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