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參數(shù)資料
| 型號： | DN350T05 |
| 廠商： | Diodes Inc. |
| 英文描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | npn型小信號晶體管表面貼裝 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 439K |
| 代理商： | DN350T05 |
DS30625 Rev. 7 - 2
2 of 4
DN350T05
www.diodes.com
Ordering Information
Device
DN350T05-7
Packaging
SOT-23
Shipping
3000/Tape & Reel
Marking Information
K3S
YM
K3S = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
(Note 5)
Note: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
350
350
5.0
V
V
V
nA
nA
I
C
= 100
m
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10
m
A, I
C
= 0
V
CB
= 250V, I
E
= 0
V
CE
= 5V, I
C
= 0
50
50
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
20
30
30
20
15
200
200
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V
I
C
= 100mA,V
CE
= 10V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 20mA, I
B
= 2.0mA
I
C
= 30mA, I
B
= 3.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 20mA, I
B
= 2.0mA
I
C
= 30mA, I
B
= 3.0mA
I
C
= 100mA, V
CE
= 10V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.30
0.35
0.50
1.0
0.75
0.80
0.90
V
Base-Emitter Saturation Voltage
V
BE(SAT)
V
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Transition Frequency
V
BE(ON)
2.0
V
C
obo
f
T
7.0
pF
MHz
V
CB
= 20V, f = 1.0MHz, I
E
= 0
V
CE
= 10V, I
C
= 20mA
50
Note: 4. Short duration pulse test used to minimize self-heating effect.
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Year
Code
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
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| DNBT8105 | 1A NPN SURFACE MOUNT TRANSISTOR |
| DNBT8105-7 | 1A NPN SURFACE MOUNT TRANSISTOR |
| DP350T05 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DN350T05_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DN350T05-7 | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DN350T05-7-F | 制造商:Diodes Incorporated 功能描述:Small Signal Bipolar Transistors |
| DN3525 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3525_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs |
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