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參數(shù)資料
| 型號(hào)： | DN2530N3 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel Depletion-Mode Vertical DMOS FETs |
| 中文描述： | 175 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | DN2530N3 |
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Source
Breakdown Voltage
300
V
V
GS
= -5V, I
D
= 100
μ
A
V
GS(OFF)
Gate-to-Source OFF Voltage
–1.0
–3.5
V
V
DS
= 25V, I
D
= 10
μ
A
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
4.5
mV/
°
C
V
DS
= 25V, I
D
= 10
μ
A
I
GSS
Gate Body Leakage Current
100
nA
V
GS
=
±
20V, V
DS
= 0V
I
D(OFF)
Drain-to-Source Leakage Current
10
μ
A
V
GS
= -10V, V
DS
= Max Rating
1
mA
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
I
DSS
Saturated Drain-to-Source Current
200
mA
V
GS
= 0V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
12
V
GS
= 0V, I
D
= 150mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/
°
C
V
GS
= 0V, I
D
= 150mA
G
FS
Forward Transconductance
300
m
I
D
= 150mA, V
DS
= 10V
C
ISS
Input Capacitance
300
V
GS
= -10V, V
DS
= 25V
C
OSS
Common Source Output Capacitance
30
pF
f = 1 MHz
C
RSS
Reverse Transfer Capacitance
5
t
d(ON)
Turn-ON Delay Time
10
V
DD
= 25V,
t
r
Rise Time
15
ns
I
D
= 150mA,
t
d(OFF)
Turn-OFF Delay Time
15
R
GEN
= 25
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= -10V, I
SD
= 150mA
t
rr
Reverse Recovery Time
600
ns
V
GS
= -10V, I
SD
= 1A
Notes:
1.
2.
All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
All A.C. parameters sample tested.
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
175mA
500mA
0.74W
125
170
175mA
500mA
TO-243AA
200mA
500mA
1.6
15
78
200mA
500mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
DN2530
Thermal Characteristics
Switching Waveforms and Test Circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DN2530N3-G | 功能描述:MOSFET 300V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DN2530N3-G P002 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET 300V 0.175A 3P TO-92 |
| DN2530N3-G P003 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET 300V 0.175A 3P TO-92 |
| DN2530N3-G P005 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET 300V 0.175A 3P TO-92 |
| DN2530N3-G P013 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET 300V 0.175A 3P TO-92 |
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