參數(shù)資料
型號(hào)： DMP2012SN-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： 700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： GREEN, PLASTIC, SC-59, 3 PIN
文件頁數(shù)： 2/4頁
文件大小： 171K
代理商： DMP2012SN-7
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-20
V
V
GS
= 0V, I
D
= 250mA
Zero Gate Voltage Drain Current
I
DSS
-10
μ
A
V
DS
= -20V, V
GS
= 0V
Gate-Body Leakage
I
GSS
±
10
μ
A
V
GS
=
±
12V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.5
-1.2
V
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -0.4A
V
GS
= -2.5V, I
D
= -0.4A
V
DS
= -10V, I
D
= 0.4A
Static Drain-Source On-Resistance
R
DS (ON)
0.23
0.37
0.30
0.50
Ω
Forward Transfer Admittance
|Y
fs
|
1.5
S
Diode Forward Voltage (Note 5)
V
SD
-0.8
-1.1
V
V
GS
= 0V, I
S
= -0.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
180
pF
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
50
pF
V
DS
= -10V, V
GS
= 0V
f
= 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
5
ns
Turn-Off Delay Time
t
D(OFF)
55
ns
Turn-On Rise Time
t
r
20
ns
Turn-Off Fall Time
Notes:
t
f
70
ns
V
DD
= -10V, I
D
= -0.4A,
V
GS
= -5.0V, R
GEN
= 50
Ω
N
5. Short duration test pulse used to minimize self-heating effect.
-3.5V
-3V
-2.5V
V
GS
=-1.5V
-2V
-5V
-4V
-4.5V
T = 25°C
T = 125°C
T = -55°C
DS30790 Rev. 2 - 2
2 of 4
www.diodes.com
DMP2012SN
Diodes Incorporated
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