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參數資料
| 型號： | DMN5L06V |
| 廠商： | Diodes Inc. |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 雙N溝道增強型場效應晶體管 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 137K |
| 代理商： | DMN5L06V |
0
0.3
0.6
0.9
0
1
2
3
4
5
V
Fig. 1 Typical Output Characteristics
DRAIN-SOURCE VOLTAGE (V)
DS
,
I
D
D
,
1.2
1.5
6V
10V
5V
3V
4V
V
= 10V
8V
6V
5V
4V
3V
GS
8V
V
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
0.01
3
I
D
D
0.001
0.1
1
0
0.5
1
1.5
2
2.5
3.5
V
Pulsed
= 10V
DS
T = 150 C
°
T = 125 C
°
T = 85 C
°
T = 25 C
°
T = -55 C
°
T = 0 C
°
T = -25 C
°
DS30604 Rev. 7 - 2
2 of 4
DMN5L06V/VA
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
50
V
V
GS
= 0V, I
D
= 10 A
Zero Gate Voltage Drain Current
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
0.1
500
±20
μA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
GSS
nA
V
GS
= ±20V, V
DS
= 0V
V
GS(th)
0.49
1.2
V
V
DS
= V
GS
, I
D
= 250 A
V
GS
= 2.7V, I
D
= 0.2A,
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
Static Drain-Source On-Resistance
R
DS (ON)
1.6
2.2
3
4
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I
D(ON)
|Y
fs
|
V
SD
0.5
200
0.5
1.0
A
mS
V
1.4
C
iss
C
oss
C
rss
50
25
5.0
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
N
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相關代理商/技術參數 |
參數描述 |
|---|---|
| DMN5L06V-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06VA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06VA-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06VAK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06VAK-7 | 功能描述:MOSFET 20V 280mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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