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參數(shù)資料
| 型號(hào)： | DMN2005LP4K |
| 廠商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 213K |
| 代理商： | DMN2005LP4K |
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source, On-Resistance
vs. Ambient Temperature
V
DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Reverse Drain Current
SD,
vs. Source-Drain Voltage
T = 150 C
°
T =
C
85
°
T =
C
25
°
T =
C
A
-55
°
|
f
I , DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
C
T
f=1MHz
Ciss
Crss
Coss
N
DS30799 Rev. 2 - 2
3 of 4
www.diodes.com
DMN2005LP4K
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMN2005LP4K_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K-7 | 功能描述:MOSFET 30V 300mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN2005LP4K-7-01 | 制造商:Diodes Incorporated 功能描述:MOSFET DUAL N-CHANNEL SOT-363 GREEN 3K - Tape and Reel |
| DMN2005LPK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK_0710 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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