參數(shù)資料
型號(hào): DMN2005DLP4K
廠商: Diodes Inc.
英文描述: DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述: 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 213K
代理商: DMN2005DLP4K
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source, On-Resistance
vs. Ambient Temperature
V
DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Reverse Drain Current
SD,
vs. Source-Drain Voltage
T = 150 C
°
T =
C
85
°
T =
C
25
°
T =
C
-55
°
|
f
I , DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance
vs. Drain Current
C
T
f=1MHz
Ciss
Crss
Coss
N
DS30801 Rev. 6 - 2
3 of 4
www.diodes.com
DMN2005DLP4K
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMN2005DLP4K_09 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005DLP4K-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN2005K 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K_0711 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube