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參數(shù)資料
| 型號(hào)： | DMN2004DWK-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 540 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | DMN2004DWK-7 |
DS30935 Rev. 2 - 2
3 of 4
DMN2004DWK
www.diodes.com
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
0.1
1
V
Pulsed
= 5V
GS
T = 150 C
°
T = -55 C
°
T = -25 C
°
T = 0 C
°
T = 25 C
°
T = 125 C
°
T = 85 C
°
0.2
0.4
0.6
0.8
1.0
6
0.2
0.1
0
0.6
0.5
0.4
0.3
0.7
1.0
0.9
0.8
0
V
, GATE-SOURCE
Fig. 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
GS
VOLTAGE (V)
4
2
T = 25°C
I = 540mA
I , DRAIN CURRENT (A)
Fig. 7
On-Resistance vs. Drain
Current and Gate Voltage
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
0.2
0.4
0.6
0.8
1
1.2
V
= 1.8V
GS
V
= 4.5V
GS
V
= 2.5V
GS
T = 25°C
T, JUNCTION TEMPERATURE ( C)
Fig. 8
Static Drain-Source, On-Resistance
vs. Temperature
°
-50
-25
0
25
50
75
100
125
150
0
0.2
0.3
0.5
0.1
0.4
V
I = 280mA
= 10V,
GS
V
I = 540mA
= 4.5V,
GS
I
,
C
D
V
Fig. 9 Drain Source Leakage Current
vs. Voltage
,
DS
DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
10000
2
4
6
8
10
12
14
16
18
20
T = 100°C
T = 150°C
I
,
D
0.001
0.01
0.1
0.5
0
1
1
V
,
SOURCE
Fig. 10 Reverse Drain Current
vs. Source-Drain Voltage
SD
DRAIN-
VOLTAGE (V)
V
= 0V
GS
T
= -55 C
A
°
T
= 150 C
A
°
T = -25 C
°
T = 0 C
°
T = 25 C
°
T
= 85 C
A
°
T
= 125 C
A
°
N
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DMN2004K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004VK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004VK-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004WK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMN2004K | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004K_10 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004K-7 | 功能描述:MOSFET 20V 540mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN2004K-7-F | 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:Product specification |
| DMN2004TK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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