參數(shù)資料
型號(hào)： DMMT5551
廠商： Diodes Inc.
英文描述： MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 匹配npn型小信號(hào)晶體管表面貼裝
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 77K
代理商： DMMT5551
DS30436 Rev. 4 - 2
2 of 3
DMMT5551/DMMT5551S
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
180
160
6.0
V
V
V
nA
A
nA
I
C
= 100 A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10 A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100 C
V
EB
= 4.0V, I
C
= 0
Collector Cutoff Current
I
CBO
50
Emitter Cutoff Current
I
EBO
50
ON CHARACTERISTICS (Note 6)
DC Current Gain (Note 7)
h
FE
80
80
30
250
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.15
0.20
V
Base-Emitter Saturation Voltage
V
BE(SAT)
1.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
= 10V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
= 200 A,
R
S
= 1.0k
f = 1.0kHz
Small Signal Current Gain
h
FE
50
250
Current Gain-Bandwidth Product
f
T
100
300
MHz
Noise Figure
NF
8.0
dB
Ordering Information
(Note 8)
Device
DMMT5551-7
DMMT5551S-7
Packaging
SOT-26
SOT-26
Shipping
3000/Tape & Reel
3000/Tape & Reel
Marking Information
K4R
Y
C
2
B
2
E
2
B
1
E
1
C
1
K4R = DMMT5551 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
T
C
U
D
O
R
P
W
E
N
Notes: 6. Short duration test pulse used to minimize self-heating effect.
7. The DC Current Gain, h
FE
, (matched at I
C
= 10mA and V
CE
= 5V) Collector Emitter Saturation Voltage, V
CE(SAT)
, and Base
Emitter Saturation Voltage, V
BE(SAT)
are matched with typical matched tolerances of 1% and maximum of 2%.
9. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DMMT5551-7-F.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMMT5551_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DMMT5551_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DMMT5551-7 功能描述:兩極晶體管 - BJT MATCHED NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DMMT5551-7-F 功能描述:兩極晶體管 - BJT MATCHED NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DMMT5551S 制造商:Diodes Incorporated 功能描述:TRANS NPNNPN MAT 180V 0.2A SOT26 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80, Operating Temperature Min:-55C, No. of Pins:6 , RoHS Compliant: Yes
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