參數(shù)資料
型號(hào)： DMMT5551-7-F
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-6
文件頁數(shù)： 2/4頁
文件大小： 101K
代理商： DMMT5551-7-F
DS30436 Rev. 7 - 2
2 of 4
DMMT5551/DMMT5551S
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
180
160
6.0
V
V
V
nA
μ
A
nA
I
C
= 100
μ
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100
°
C
V
EB
= 4.0V, I
C
= 0
Collector Cutoff Current
I
CBO
50
Emitter Cutoff Current
I
EBO
50
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
h
FE
80
80
30
250
0.15
0.20
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
Base-Emitter Saturation Voltage
V
BE(SAT)
1.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
= 10V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 200
μ
A,
R
S
= 1.0k
,
f = 1.0kHz
Small Signal Current Gain
h
FE
50
250
Current Gain-Bandwidth Product
f
T
100
300
MHz
Noise Figure
NF
8.0
dB
Ordering Information
(Note 6 & 9)
Device
Packaging
SOT-26
SOT-26
Shipping
3000/Tape & Reel
3000/Tape & Reel
DMMT5551-7-F
DMMT5551S-7-F
Marking Information
K4R
Y
C
2
B
2
E
2
B
1
E
1
C
1
K4R = DMMT5551 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Notes: 6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h
FE
, (matched at I
C
= 10mA and V
CE
= 5V) Collector Emitter Saturation Voltage, V
CE(SAT)
, and Base
Emitter Saturation Voltage, V
BE(SAT)
are matched with typical matched tolerances of 1% and maximum of 2%.
9. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K4T = DMMT5551S Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
K4T
Y
C
2
B
2
E
1
E
2
C
1
B
1
Year
Code
2003
Q
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
相關(guān)PDF資料
PDF描述
DMMT5551S-7-F MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN100-7 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK-7 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMMT5551S 制造商:Diodes Incorporated 功能描述:TRANS NPNNPN MAT 180V 0.2A SOT26 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80, Operating Temperature Min:-55C, No. of Pins:6 , RoHS Compliant: Yes
DMMT5551S-13 制造商:Diodes Incorporated 功能描述:P-CHANNEL, SOT-23, 60V, LL, 8OHM,130MA, SMT - Tape and Reel
DMMT5551S-13-F 制造商:Diodes Incorporated 功能描述:TRANS GP BJT NPN 160V 0.2A 6PIN SOT-26 - Tape and Reel
DMMT5551S-7 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DMMT5551S-7-F 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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