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參數(shù)資料
| 型號： | DMMT3906W-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 162K |
| 代理商： | DMMT3906W-7-F |
DS30312 Rev. 9 - 2
2 of 4
DMMT3906W
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
-40
-40
-5.0
V
V
V
nA
nA
I
C
= -10
m
A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10
m
A, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CE
= -30V, V
EB(OFF)
= -3.0V
-50
-50
ON CHARACTERISTICS (Note 5)
DC Current Gain (Note 6)
h
FE
60
80
100
60
30
300
I
C
= -100μA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CE
= -5V, I
C
= -2mA
Collector-Emitter Saturation Voltage (Note 6)
V
CE(SAT)
-0.25
-0.40
V
Base-Emitter Saturation Voltage (Note 6)
V
BE(SAT)
-0.65
-0.85
-0.95
-1
V
Base-Emitter Voltage Matching
D
V
BE
mV
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
4.5
10
12
10
400
60
pF
pF
k
W
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
2.0
0.1
100
3.0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
x 10
-4
m
S
Current Gain-Bandwidth Product
f
T
250
MHz
V
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -100
m
A,
R
S
= 1.0k
W,
f = 1.0kHz
Noise Figure
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
35
35
225
75
ns
ns
ns
ns
V
CC
= -3.0V, I
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
= -10mA,
I
B1
= I
B2
= -1.0mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. The DC current gain, h
FE
, (matched at I
C
= -10mA and V
CE
= -1.0V) Collector-Emitter Saturation Voltage, V
CE (sat)
, and
Base-Emitter Saturation Voltage, V
BE(sat)
are matched with typical matched tolerances of 1% and maximum of 2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMMT5401 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5401_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5401_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5401-7 | 功能描述:兩極晶體管 - BJT MATCHED PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DMMT5401-7-F | 功能描述:兩極晶體管 - BJT MATCHED PNP SM SIGNAL TRANS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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