參數(shù)資料
型號(hào)： DMMT3906-7-F
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-6
文件頁數(shù)： 2/4頁
文件大小： 162K
代理商： DMMT3906-7-F
DS30293 Rev. 5 - 2
2 of 4
DMMT3906
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
-40
-40
-5.0
V
V
V
nA
nA
I
C
= -10
m
A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10
m
A, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CE
= -30V, V
EB(OFF)
= -3.0V
-50
-50
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
h
FE
60
80
100
60
30
300
I
C
= -100μA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.25
-0.40
V
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.65
-0.85
-0.95
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
4.5
10
12
10
400
60
pF
pF
k
W
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
2.0
0.1
100
3.0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
x 10
-4
m
S
Current Gain-Bandwidth Product
f
T
250
MHz
V
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -100
m
A,
R
S
= 1.0k
W,
f = 1.0kHz
Noise Figure
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
35
35
225
75
ns
ns
ns
ns
V
CC
= -3.0V, I
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
= -10mA,
I
B1
= I
B2
= -1.0mA
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. The DC current gain, h
FE
, is matched at I
C
= -10mA and V
CE
= -1.0V with typical matched tolerances of 1% and maximum of 2%.
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Date Code Key
K3Q
YM
K3Q = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Marking Information
相關(guān)PDF資料
PDF描述
DMMT3906W-7-F MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMMT3906-T 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DMMT3906-TP 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DMMT3906W 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DMMT3906W_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DMMT3906W_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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