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參數(shù)資料
| 型號(hào)： | DMMT3904W-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 89K |
| 代理商： | DMMT3904W-7-F |
DS30311 Rev. 9 - 2
2 of 4
www.diodes.com
DMMT3904W
Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
60
V
I
C
= 10
μ
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
Collector-Emitter Breakdown Voltage
40
V
Emitter-Base Breakdown Voltage
6.0
V
Collector Cutoff Current
I
CEX
I
BL
50
nA
Base Cutoff Current
50
nA
ON CHARACTERISTICS (Note 4)
DC Current Gain (Note 5)
h
FE
40
70
100
60
30
300
0.20
0.30
I
C
= 100μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
Collector-Emitter Saturation Voltage (Note 5)
V
CE(SAT)
V
= 5.0mA
Base-Emitter Saturation Voltage (Note 5)
V
BE(SAT)
0.65
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Voltage Matching
Δ
V
BE
1
mV
V
CE
= 5V, I
C
= 2mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
C
ibo
h
ie
1.0
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Capacitance
8.0
pF
Input Impedance
10
k
Ω
x 10
-4
Voltage Feedback Ratio
h
re
h
fe
h
oe
0.5
8
Small Signal Current Gain
100
400
μ
S
Output Admittance
1.0
40
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
300
MHz
V
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 100
μ
A,
R
S
= 1.0k
Ω,
f = 1.0kHz
Noise Figure
NF
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
t
d
t
r
35
ns
Rise Time
35
ns
V
CC
= 3.0V, I
= 10mA,
V
BE(off)
= -0.5V, I
B1
= 1.0mA
Storage Time
t
s
t
f
200
ns
Fall Time
Notes:
50
ns
V
CC
= 3.0V, I
= 10mA,
I
B1
= I
B2
= 1.0mA
4. Short duration pulse test used to minimize self-heating effect.
5. The DC current gain, h
, (matched at I
C
= 10mA and V
= 1.0V) Collector Emitter Saturation Voltage, V
,
and Base Emitter Saturation Voltage, V
BE(SAT)
are matched with typical matched tolerances of 1% and maximum of 2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMMT3906 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Small Signal Transistors |
| DMMT3906_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT3906_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Small Signal Transistors |
| DMMT3906_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT3906-7 | 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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