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| 型號： | DMMT3904 |
| 廠商： | Diodes Inc. |
| 英文描述： | 16 AMP LOW PROFILE POWER RELAY |
| 中文描述： | 匹配npn型小信號晶體管表面貼裝 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 67K |
| 代理商： | DMMT3904 |
DS30311 Rev. 3 - 2
2 of 3
DMMT3904W
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
60
40
6.0
V
V
V
nA
nA
I
C
= 10 A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10 A, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
50
50
ON CHARACTERISTICS (Note 5)
DC Current Gain (Note 6)
h
FE
40
70
100
60
30
300
I
C
= 100μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage (Note 6)
V
CE(SAT)
0.20
0.30
V
Base-Emitter Saturation Voltage (Note 6)
V
BE(SAT)
0.65
0.85
0.95
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
4.0
8.0
10
8
400
40
pF
pF
k
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
1.0
0.5
100
1.0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
x 10
-4
S
Current Gain-Bandwidth Product
f
T
300
MHz
V
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
= 100 A,
R
S
= 1.0k
Noise Figure
NF
5.0
dB
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
35
35
200
50
ns
ns
ns
ns
V
CC
= 3.0V, I
= 10mA,
V
BE(off)
= -0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
= 10mA,
I
B1
= I
B2
= 1.0mA
Notes:
6. The DC current gain, h
FE
, (matched at I
C
= 10mA and V
CE
= 1.0V) Collector Emitter Saturation Voltage, V
CE(SAT)
, and Base
Emitter Saturation Voltage, V
BE(SAT)
are matched with typical matched tolerances of 1% and maximum of 2%.
5. Short duration test pulse used to minimize self-heating effect.
T
C
U
D
O
R
P
W
E
N
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Date Code Key
KJG = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4A
Y
Marking Information
Year
Code
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| DMMT3904_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Small Signal Transistors |
| DMMT3904-T | 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DMMT3904-TP | 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| DMMT3904W_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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