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參數(shù)資料
| 型號： | DMDT9922 |
| 廠商： | Diodes Inc. |
| 英文描述： | PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR |
| 中文描述： | 進(jìn)步黨雙，配對表面貼裝晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 60K |
| 代理商： | DMDT9922 |
UNAPPROVED
NOT FOR
DISTRIBUTION
D
S
30142 Rev. 1P-5
2 of 2
DMDT9922
A
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Leakage Current
Emitter-Base Leakage Current
Collector-Emitter Leakage Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
-50
-40
-5.0
V
V
V
nA
nA
nA
I
C
= -50 A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -50 A, I
C
= 0
V
CB
= -30V
V
EB
= -4.0V
V
CE
= -40V
-0.3
-500
-500
-1000
-4
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
300
450
555
I
C
= -1.0mA, V
CE
= -6.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
CE(SAT)
r
be
V
OS
V
OS/
V
CB
-0.1
-0.1
-0.5
V
V
I
C
= -50mA, I
B
= -5.0mA
I
C
= -1mA, I
B
= -0.1mA
Base-Emitter Impedance
Emitter-Base Offset Voltage
-0.5
10
I
C
= -10 A to -1mA
V
CB
= 0V, I
C
= -1 A to -1mA
V
Change in Emitter-Base Offset Voltage vs. Collector-Base
Voltage (CMRR)
10
V
V
CB
= 0V, I
C
= -1 A to -1mA
Change in Emitter-Base Offset Voltage vs.
Collector-Current
V
OS/
I
C
5
V
V
CB
= 0V, I
C
= -10 A to -1mA
Average Offset Voltage Drift
Emitter-Base Offset Current
TC V
OS
I
OS
I
OS/
V
CB
TC I
OS
I
CC
0.5
8
V C
nA
I
C
= -10 A to -1mA
I
C
= -10 A, V
CB
= 0V
Change in Emitter-Base Offset Current vs. Collector-Base
Voltage
30
nA
V
CB
= 0 to -50V
Average Offset Current Drift
Collector-Collector Leakage Current
50
35
pA C
pA
I
C
= -10 A
V
CE
= -40V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Output Conductance
C
obo
C
ibo
h
OE
-4
15
70
pF
pF
S
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, I
C
= 0, f = 1MHz
I
C
= -1mA, V
CE
= -5V
V
= -12V, I
C
= -2.0mA,
f = 100MHz
10
Current Gain-Bandwidth Product
f
T
170
MHz
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300 s, duty cycle
2%.
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