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參數(shù)資料
| 型號(hào)： | DMBT2369 |
| 廠商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 技術(shù)規(guī)格晶體管瑞展 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 226K |
| 代理商： | DMBT2369 |
DMBT2369
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high speed switching applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
.091(2.30)
.067(1.70)
SOT-23
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.108(0.65)
.089(0.25)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.020(0.50)
.012(0.30)
.0043(0.11)
.0035(0.09)
.004
(0.10)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
Max
.027(0.67)
.013(0.32)
2
1
3
Characteristic
Symbol
V
CBO
V
CES
V
EBO
I
C
P
D
T
J
T
STG
Rating
40
40
4.5
500
225
+150
-55 to +150
Unit
V
V
V
mA
mW
o
C
o
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
C
ob
Min
40
40
15
4.5
-
-
700
40
20
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
400
250
850
120
-
4
Unit
V
V
V
V
nA
mV
mV
-
-
pF
Test Conditions
I
C
=10
μ
A, I
E
=0
I
C
=10
μ
A, I
B
=0
I
C
=10mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=20V, I
E
=0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, V
CE
=1V
I
C
=100mA, V
CE
=2V
V
CB
=5V, f=1MHz, I
E
=0
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
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