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參數(shù)資料
| 型號： | DIM200BSS12-A000 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | B, 5 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 139K |
| 代理商： | DIM200BSS12-A000 |
DIM200BSS12-A000
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
5
10
15
20
25
30
35
40
45
0
50
100
150
200
Collector current, I
C
- (A)
S
s
E
on
E
off
E
rec
T
c
= 125
C,
V
cc
= 600V,
R
g
= 4.7 Ohms
0
5
10
15
20
25
30
35
40
45
50
55
4
10
12
Gate resistance, R
g
- (Ohms)
S
s
8
6
E
on
E
off
E
rec
T
c
= 125
C,
V
cc
= 600V,
I
C
= 200A
0
50
100
150
200
250
300
350
400
0
0.5
1.0
Collector-emitter voltage, V
ce
- (V)
1.5
2.0
2.5
3.0
3.5
4.0
C
C
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 25
C
V
is measured at power busbars
and not the auxiliary terminals
0
50
100
150
200
250
300
350
400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-emitter voltage, V
ce
- (V)
C
C
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 125
C
V
is measured at power busbars
and not the auxiliary terminals
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