參數(shù)資料
型號: DIM1800ESM12-A
英文描述: IGBT Modules - Single Switch
中文描述: IGBT模塊-單開關(guān)
文件頁數(shù): 5/10頁
文件大小: 221K
代理商: DIM1800ESM12-A
DIM1800ESM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1250
190
330
220
200
100
20
210
860
110
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1800A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 1.2
L ~ 60nH
I
F
= 1800A, V
R
= 50% V
CES
,
dI
F
/dt = 9000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
O
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1
1450
190
390
230
340
180
390
1100
200
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1800A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 1.2
L ~ 60nH
I
F
= 1800A, V
R
= 50% V
CES
,
dI
F
/dt = 8000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DIM1800ESM12-A00 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR
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DIM1800ESS12A00 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR
DIM1800ESS12-A000 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Single Switch IGBT Module
DIM200BSS12-A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Modules - Single Switch