參數(shù)資料
型號(hào)： DG9262DY-E3
廠商： Vishay Siliconix
文件頁數(shù)： 5/12頁
文件大小： 0K
描述： IC SWITCH DUAL SPST 8SOIC
標(biāo)準(zhǔn)包裝： 500
功能： 開關(guān)
電路： 2 x SPST - NC
導(dǎo)通狀態(tài)電阻： 60 歐姆
電壓電源： 單電源
電壓 - 電源，單路/雙路(±)： 2.7 V ~ 5 V
電流 - 電源： 1µA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SOICN
包裝： 管件
www.vishay.com
2
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
Vishay Siliconix
DG9262, DG9263
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5 V leakage testing, not production tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 13
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (Any Terminal)
± 20
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 40
ESD (Method 3015.7)
> 2000
V
Storage Temperature (D Suffix)
- 65 to 125
°C
Power Dissipation (Packages)b
8-Pin Narrow Body SOICc
400
mW
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, VIN = 0.8 V or 2.4 V
e
Temp.a
D Suffix
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VANALOG
Full
0
3
V
Drain-Source On-Resistance
RDS(on)
VNO or VNC = 1.5 V, V+ = 2.7 V
ICOM = 5 mA
Room
Full
50
80
140
RDS(on)Match
d
RDS(on)
VNO or VNC = 1.5 V
Room
0.4
2
RDS(on) Flatness
d
RDS(on)
Flatness
VNO or VNC = 1 and 2 V
Room
4
8
NO or NC Off Leakage
Currentg
INO/NC(off)
VNO or VNC = 1 V/2 V, VCOM = 2 V/1 V
Room
Full
- 100
- 5000
5
100
5000
pA
COM Off Leakage Currentg
ICOM(off)
VCOM = 1 V/2 V, VNO or VNC = 2 V/1 V
Room
Full
- 100
- 5000
5
100
5000
Channel-On Leakage Currentg
ICOM(on)
VCOM = VNO or VNC = 1 V/2 V
Room
Full
- 200
- 10 000
10
200
10 000
Digital Control
Input Current
IINL or IINH
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 1.5 V
Room
Full
50
120
200
ns
Turn-Off Time
tOFF
Room
Full
20
50
120
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0
Room
1
5
pC
Off-Isolation
OIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room
- 74
dB
Crosstalk
XTALK
Room
- 90
NC and NO Capacitance
C(off)
f = 1 MHz
Room
7
pF
Channel-On Capacitance
CCOM(on)
Room
20
COM-Off Capacitance
CCOM(off)
Room
13
Power Supply
Power Supply Range
V+
2.7
12
V
Power Supply Current
I+
V+ = 3.3 V, VIN = 0 V or 3.3 V
1A
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