參數資料
| 型號： | DG643DY-E3 |
| 廠商： | Vishay Siliconix |
| 文件頁數： | 12/18頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC VIDEO SWITCH SPDT 16SOIC |
| 標準包裝： | 500 |
| 功能： | 視頻開關 |
| 電路： | 2 x SPDT |
| 導通狀態(tài)電阻： | 15 歐姆 |
| 電壓電源： | 單/雙電源 |
| 電壓 - 電源，單路/雙路(±)： | 10 V ~ 18 V，±10 V ~ 15 V |
| 電流 - 電源： | 3.5mA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝： | 16-SOIC N |
| 包裝： | 管件 |
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
www.vishay.com
3
Vishay Siliconix
DG641, DG642, DG643
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
SPECIFICATIONS (for DG641 and DG643)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
VINH = 2.4 V, VINL = 0.8 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VANALOG
V- = - 5 V, V+ = 12 V
Full
- 5
8
V
V- = GND V, V+ = 12 V
Full
0
8
Drain-Source On-Resistance
RDS(on)
IS = - 10 mA, VD = 0 V
Room
Full
815
20
RDS(on) Match
R
DS(on)
Room
1
2
Source Off Leakage Current
IS(off)
VS = 0 V, VD = 10 V
Room
Full
- 10
- 100
- 0.02
10
100
nA
Drain Off Leakage Current
ID(off)
VS = 10 V, VD = 0 V
Room
Full
- 10
- 100
- 0.02
10
100
Channel On Leakage Current
ID(on)
VS = VD = 0 V
Room
Full
- 10
- 100
- 0.1
10
100
Digital Control
Input Voltage High
VINH
Full
2.4
V
Input Voltage Low
VINL
Full
0.8
Input Current
IIN
VIN = GND or V+
Room
Full
- 1
- 20
0.05
1
20
A
Dynamic Characteristics
On State Input Capacitanced
CS(on)
VS = VD = 0 V
Room
10
20
pF
Off State Output Capacitanced
CS(off)
VS = 0 V
Room
4
12
Off State Input Capacitanced
CD(off)
VD = 0 V
Room
4
12
Bandwidth
BW
RL = 50 see figure 6
Room
500
MHz
Turn On Time
tON
RL = 1 kCL = 35 pF
see figure 2
Room
Full
50
70
140
ns
Turn Off Time
tOFF
Room
Full
28
50
85
Charge Injection
Q
CL = 1000 pF, VD = 0 V
see figure 3
Room
- 19
pC
Off Isolation
OIRR
RIN = 75 RL = 75
f = 5 MHz, see figure 4
Room
- 60
dB
All Hostie Crosstalk
XTALK
RIN = 10 , RL = 75
f = 5 MHz, see figure 5
Room
- 87
Power Supplies
Positive Supply Current
I+
VIN = 0 V or VIN = 5 V
Room
Full
3.5
6
9
mA
Negative Supply Current
I-
Room
Full
- 6
- 9
- 3
相關PDF資料 |
PDF描述 |
|---|---|
| DG722DQ-T1-GE3 | IC SWITCH |
| DG787DQ-T1-E3 | IC SWITCH SPDT 10MSOP |
| DG884DN-E3 | IC VIDEO MULTIPLEXER 8X4 |
| DG9233DY-E3 | IC SWITCH DUAL SPST 8SOIC |
| DG9236DN-T1-E4 | IC ANLG SWITCH DUAL SPST 10QFN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DG643DY-T1 | 功能描述:多路器開關 IC Wideband Dual SPDT RoHS:否 制造商:Texas Instruments 通道數量:1 開關數量:4 開啟電阻（最大值）:7 Ohms 開啟時間（最大值）: 關閉時間（最大值）: 傳播延遲時間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UQFN-16 |
| DG643DY-T1-E3 | 功能描述:視頻開關 IC Wideband Dual SPDT RoHS:否 制造商:Texas Instruments 開關數量:4 開啟電阻（最大值）:12 Ohms 傳播延遲時間: 開啟時間（最大值）: 關閉時間（最大值）: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:WQFN-42 封裝:Reel |
| DG646BH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GTO Thyristors - Disc / Puk Devices |
| DG646BH25 | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
| DG646BH25_05 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Turn-off Thyristor |
發(fā)布緊急采購，3分鐘左右您將得到回復。