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參數(shù)資料
| 型號(hào)： | DG611 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High-Speed, Low-Glitch D/CMOS Analog Switches(高速，低電容四單刀單擲D/CMOS模擬開關(guān)) |
| 中文描述： | 高速，低故障數(shù)/ CMOS模擬開關(guān)（高速，低電容四單刀單擲數(shù)/的CMOS模擬開關(guān)） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 72K |
| 代理商： | DG611 |
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Top View
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GND
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Dual-In-Line
and SOIC
DG611
Top View
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GND
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LCC
NC IN
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DG611
DG611/612/613
Vishay Siliconix
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
www.vishay.com
1
High-Speed, Low-Glitch D/CMOS Analog Switches
Fast Switching— t
ON
: 12 ns
Low Charge Injection:
Wide Bandwidth: 500 MHz
5-V CMOS Logic Compatible
Low r
DS(on)
: 18
Low Quiescent Power : 1.2 nW
Single Supply Operation
2 pC
Improved Data Throughput
Minimal Switching Transients
Improved System Performance
Easily Interfaced
Low Insertion Loss
Minimal Power Consumption
Fast Sample-and-Holds
Synchronous Demodulators
Pixel-Rate Video Switching
Disk/Tape Drives
DAC Deglitching
Switched Capacitor Filters
GaAs FET Drivers
Satellite Receivers
The DG611/612/613 feature high-speed low-capacitance
lateral DMOS switches. Charge injection has been minimized
to optimize performance in fast sample-and-hold applications.
Each switch conducts equally well in both directions when on
and blocks up to 16 V
p-p
when off. Capacitances have been
minimized to ensure fast switching and low-glitch energy. To
achieve such fast and clean switching performance, the
DG611/612/613 are built on the Vishay Siliconix proprietary
D/CMOS process. This process combines n-channel DMOS
switching FETs with low-power CMOS control logic and
drivers. An epitaxial layer prevents latchup.
The DG611 and DG612 differ only in that they respond to
opposite logic levels. The versatile DG613 has two normally
open and two normally closed switches. It can be given various
configurations, including four SPST, two SPDT, one DPDT.
For additional information see Applications Note AN207
(FaxBack number 70605).
Four SPST Switches per Package
Logic
DG611
DG612
0
ON
OFF
1
OFF
ON
Logic “0”
Logic “1”
1 V
4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DG612 | High-Speed, Low-Glitch D/CMOS Analog Switches(高速，低電容四單刀單擲D/CMOS模擬開關(guān)) |
| DG613 | High-Speed, Low-Glitch D/CMOS Analog Switches(高速，低電容四單刀單擲D/CMOS模擬開關(guān)) |
| DG641 | Low On-Resistance Wideband/Video Switches(低導(dǎo)通電阻寬帶/視頻四單刀單擲模擬開關(guān)) |
| DG642 | Low On-Resistance Wideband/Video Switches(低導(dǎo)通電阻寬帶/視頻單刀雙擲模擬開關(guān)) |
| DG643 | Low On-Resistance Wideband/Video Switches(低導(dǎo)通電阻寬帶/視頻雙單刀雙擲模擬開關(guān)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DG611_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Speed, Low-Glitch D/CMOS Analog Switches |
| DG611_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Speed, Low-Glitch D/CMOS Analog Switches |
| DG611A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches |
| DG611A_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches |
| DG611AEN-T1-E4 | 功能描述:模擬開關(guān) IC Quad SPST Switches RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
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