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參數(shù)資料
| 型號： | DG4599DL-T1-E3-HF |
| 廠商： | Vishay Siliconix |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 0K |
| 描述： | IC SWITCH SINGLE SPDT SC70-6 |
| 標(biāo)準(zhǔn)包裝： | 3,000 |
| 功能： | 開關(guān) |
| 電路： | 單刀雙擲 |
| 導(dǎo)通狀態(tài)電阻： | 60 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 2.25 V ~ 5.5 V |
| 電流 - 電源： | 10nA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 6-TSSOP，SC-88，SOT-363 |
| 供應(yīng)商設(shè)備封裝： | SC-70-6 |
| 包裝： | 帶卷 (TR) |
www.vishay.com
2
Document Number: 72218
S-70852-Rev. C, 30-Apr-07
Vishay Siliconix
DG4599
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 25 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Referenced V+ to GND
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (Any Terminal)
± 50
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 200
Storage Temperature (D Suffix)
- 65 to 125
°C
Power Dissipation (Packages)b
6-Pin SO70c
250
mW
SPECIFICATIONS (V+ = 5 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 V
e
Tempa
Limits
- 40 to 85 °C
Unit
Minb
Typc
Maxb
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
Full
0
V+
V
Drain-Source On-Resistance
rDS(on)
V+ = 4.5 V, VD = 3 V, IS = 10 mA
Room
Full
7
10
60
65
Ω
rDS(on) Flatness
d
rDS(on)
Flatness
V+ = 2.5 V
Room
2
Switch Off Leakage Current
IS(off)
V+ = 5.5 V
VS = 1 V/4.5 V, VD = 4.5 V/1 V
Room
Full
- 1.0
- 4.0
1.0
4.0
nA
ID(off)
Room
Full
- 1.0
- 4.0
1.0
4.0
Channel-On Leakage Current
ID(on)
V+ = 5.5 V, VS = VD = 1 V/4.5 V
Room
Full
- 1.0
- 3.0
1.0
4.5
Digital Control
Input High Voltage
VINH
Full
2.4
V
Input Low Voltage
VINL
Full
0.8
Input Capacitance
Cin
Full
3
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
- 1
1
A
Dynamic Characteristics
Turn-On Timed
tON
VD or VS = 3 V, RL = 300 Ω, CL = 35 pF
Figures 1 and 2
Room
Full
930
40
ns
Turn-Off Timed
tOFF
Room
Full
525
30
Break-Before-Make Timed
td
Room
1
4
Charge Injectiond
QINJ
CL = 1 nF, VS = 0 V
VGEN = 0 V, RGEN = 0 Ω, Figure 3
Room
5
10
pC
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
- 73
dB
Crosstalkd
XTALK
Room
- 70
Source-Off Capacitanced
CS(off)
VIN = 0 or V+, f = 1 MHz
Room
7
pF
Channel-On Capacitanced
CD(on)
Room
20
Drain-to-Source Capacitanced
CDS(off)
Room
20
Power Supply
Power Supply Range
V+
4.5
5.5
V
Power Supply Current
I+
VIN = 0 or V+
0.01
1.0
A
Power Consumption
PC
5.5
W
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