
DG411HS/412HS/413HS
Vishay Siliconix
New Product
Document Number: 72053
S-22064
—
Rev. A, 18-Nov-02
www.vishay.com
3
ABSOLUTE MAXIMUM RATINGS
V+ to V-
GND to V-
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle)
Storage Temperature
44 V
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(GND -0.3 V) to (V+) +0.3 V
(V-) -2 V to (V+) +2 V
or 30 mA, whichever occurs first
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
(AK, AZ Suffix)
. . . . . . . . . . . . . . .
(DJ, DY, DN Suffix)
. . . . . . . . . . .
30 mA
100 mA
-65 to 150 C
-65 to 125 C
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
470 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOIC
d
16-Pin CerDIP
e
LCC-20
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin (4x4mm) QFN
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
900 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
900 mW
1880 mW
Notes:
a.
Signals on S
, D
, or IN
exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6 mW/ C above 25 C
Derate 12 mW/ C above 75 C
Derate 23.5 mW/ C above 70 C
b.
c.
d.
e.
f.
SPECIFICATIONS
a
Test Conditions
Unless Specified
A Suffix
-55 to 125 C
D Suffix
-40 to 85 C
Parameter
Symbol
V+ = 15 V, V- = -15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
-15
15
-15
15
V
Drain-Source
On-Resistance
r
DS(on)
V+ = 13.5 V, V- = -13.5 V
I
S
= -10 mA, V
D
=
8.5 V
Room
Full
25
35
45
35
45
Switch Off
Leakage Current
I
S(off)
V+ = 16.5, V- = -16.5 V
V
D
=
15.5 V, V
S
=
Room
Full
0.1
-0.25
-20
0.25
20
-0.25
-5
0.25
5
I
D(off)
15.5 V
Room
Full
0.1
-0.25
-20
0.25
20
-0.25
-5
0.25
5
nA
Channel On
Leakage Current
I
D(on)
V+ = 16.5 V, V- = -16.5 V
V
S
= V
D
=
15.5 V
Room
Full
0.1
-0.4
-40
0.4
40
-0.4
-10
0.4
10
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Input Capacitance
e
I
IL
I
IH
C
IN
V
IN
Under Test = 0.8 V
V
IN
Under Test = 2.4 V
f = 1 MhZ
Full
0.005
-0.5
0.5
-0.5
0.5
Full
0.005
-0.5
0.5
-0.5
0.5
A
Room
5
pF
Dynamic Characteristics
Turn-On Time
t
ON
R
= 300
V
S
=
10 V See Figure 2
Room
Full
68
105
127
105
116
Turn-Off Time
t
OFF
, C
= 35 pF
Room
Full
42
80
94
80
90
ns
Break-Before-Make
Time Delay
t
D
DG413HS Only, V
= 10 V
R
L
= 300
V
g
= 0 V, R
g
= 0
, C
L
= 35 pF
Room
20
Charge Injection
Off Isolation
e
Q
, C
L
= 1 nF
Room
22
pC
OIRR
Room
-91
Channel-to-Channel Cross-
talk
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
X
TALK
R
L
= 50
, C
= 5 pF,
f = 1 MHz
Room
-88
dB
C
S(off)
C
D(off)
C
D(on)
Room
12
f = 1 MHz
Room
12
pF
Room
30
Power Supplies
Positive Supply Current
I+
Room
Full
0.0001
1
5
1
5
Negative Supply Current
I-
V+ = 16.5, V- = -16.5 V
V
IN
= 0 or 5 V
Room
Full
-0.0001
-1
-5
-1
-5
Logic Supply Current
I
L
Room
Full
0.0001
1
5
1
5
A
Ground Current
I
GND
Room
Full
-0.0001
-1
-5
-1
-5