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參數(shù)資料
| 型號： | DG406BDW-E3 |
| 廠商： | Vishay Siliconix |
| 文件頁數(shù)： | 12/16頁 |
| 文件大小： | 0K |
| 描述： | IC ANALOG SWITCH SPDT 28SOIC |
| 標(biāo)準(zhǔn)包裝： | 250 |
| 功能： | 多路復(fù)用器 |
| 電路： | 1 x 16:1 |
| 導(dǎo)通狀態(tài)電阻： | 100 歐姆 |
| 電壓電源： | 單/雙電源 |
| 電壓 - 電源，單路/雙路(±)： | 12V，±15V |
| 電流 - 電源： | 30µA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 28-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 28-SOIC W |
| 包裝： | 管件 |
DG406B, DG407B
www.vishay.com
Vishay Siliconix
S13-2513-Rev. D, 09-Dec-13
5
Document Number: 72552
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Guaranteed by ± 15 V leakage test, not production tested.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g.
R
DS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR SINGLE SUPPLY
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
TEMP.b
TYP.c
D SUFFIX
-40 °C to 85 °C
UNIT
V+ = 15 V, V- = -15 V
MIN.d
MAX.d
VAL = 0.8 V, VAH = 2.4 Vf
Analog Switch
Analog Signal Rangee
VANALOG
Full
-
0
12
V
Drain-Source On-Resistance
RDS(on)
VD = 3 V, IS = -1 mA
sequence each switch on
Room
78
-
100
RDS(on) Matching Between
Channelsg
R
DS(on)
Room
5
-
%
Source Off Leakage Currenta
IS(off)
VD = 10 V or 0.5 V,
VS = 0.5 V or 10 V,
VEN = 0 V
Room
-
-0.5
0.5
nA
Drain Off Leakage
Current
DG406B
ID(off)
Room
-
-1
1
DG407B
Room
-
-1
1
Drain On Leakage
Current
DG406B
ID(on)
VS = VD = ± 10 V
sequence each switch on
Room
-
-1
1
DG407B
Room
-
-1
1
Dynamic Characteristics
Transition Time
tTRANS
VS1 = 8 V, VS8 = 0 V,
VIN = 2.4 V
Room
130
-
163
ns
Enable Turn-On Time
tON(EN)
VINH = 2.4 V, VINL = 0 V,
VIN = 5 V
Room
93
-
125
Enable Turn-Off Time
tOFF(EN)
Room
63
-
94
Charge Injection
Q
CL = 1 nF, VS = 6 V
RS = 0
Room
9
-
pC
Power Supplies
Positive Supply Current
I+
VEN = 0 V or 5 V
VA = 0 V or 5 V
Room
13
-
30
μA
Full
-
75
Positive Supply Current
I+
Room
-0.01
-20
-
Full
-
-20
-
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