參數(shù)資料
| 型號： | DG2730DN-T1-GE4 |
| 廠商： | Vishay Siliconix |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 0K |
| 描述： | IC SWITCH |
| 標準包裝： | 3,000 |
| 功能： | 開關 |
| 電路： | 1 x DPDT |
| 導通狀態(tài)電阻： | 8 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 2.6 V ~ 4.3 V |
| 電流 - 電源： | 2µA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 10-UFQFN |
| 供應商設備封裝： | 10-迷你型QFN（1.4x1.8） |
| 包裝： | 帶卷 (TR) |
www.vishay.com
2
Document Number: 67786
S11-2396-Rev. F, 05-Dec-11
Vishay Siliconix
DG2730
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on S, OE, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current
ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.6 mW/°C above 70 °C.
ORDERING INFORMATION
Temp. Range
Package
Part Number
- 40 °C to 85 °C
miniQFN-10
DG2730DN-T1-GE4
TRUTH TABLE
OE (Pin 8)
S (Pin 10)
Function
0
1
D+ = HSD1+ and D- = HSD1-
0
D+ = HSD2+ and D- = HSD2-
1
X
Disconnect
PIN DESCRIPTIONS
Pin Name
Description
OE
Bus Switch Enable
S
Select Input
HSD1±, HSD2±, D±
Data Port
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Unit
Reference to GND
V+
- 0.3 to 6
V
S, OE, D±, HSD1±, HSD2±a
- 0.3 to (V+ + 0.3)
Current (Any Terminal except S, OE, D±, HSD1±, HSD2±)
30
mA
Continuous Current (S, OE, D±, HSD1±, HSD2±)
± 250
Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)
± 500
Storage Temperature (D Suffix)
- 65 to 150
°C
Power Dissipation (Packages)b
miniQFN-10c
208
mW
ESD (Human Body Model) I/O to GND
8
kV
Latch-up (Current Injection)
300
mA
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VANALOG
RDS(on)
Full
0
V+
V
On-Resistance
RDS(on)
V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V
Room
7
8
Full
9
On-Resistance Matchd
R
ON
V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V
Room
0.8
On-Resistance Resistance
Flatnessd
RON Flatness
V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0 V, 1 V
Room
2
Switch Off Leakage Current
I(off)
V+ = 4.3 V, VHSD1/2± = 0.3 V, 3 V,
VD± = 3 V, 0.3 V
Full
- 100
100
nA
Channel On Leakage Current
I(on)
V+ = 4.3 V, VHSD1/2± = 0.3 V, 4 V,
VD± = 4 V, 0.3 V
Full
- 200
200
Digital Control
Input Voltage High
VINH
V+ = 3 V to 3.6 V
Full
1.3
V
V+ = 4.3 V
Full
1.5
Input Voltage Low
VINL
V+ = 3 V to 4.3 V
Full
0.5
Input Capacitance
CIN
Full
6.5
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
- 1
1
A
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