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參數資料
| 型號： | DG2707DN-T1-E4 |
| 廠商： | Vishay Siliconix |
| 文件頁數： | 4/10頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MUX/SW ANLG LV CMOS 16MINIQFN |
| 標準包裝： | 6,000 |
| 功能： | 多路復用器 |
| 電路： | 2 x 4:1 |
| 導通狀態(tài)電阻： | 5.5 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 1.65 V ~ 4.3 V |
| 電流 - 電源： | 1µA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-WFQFN |
| 供應商設備封裝： | 16-迷你型QFN（1.8x2.6） |
| 包裝： | 帶子 |
Document Number: 68397
S11-0176-Rev. B, 07-Feb-11
www.vishay.com
3
Vishay Siliconix
DG2707
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3.15 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
Temp.b
Limits
- 40 °C to 85 °C
Unit
Min.d Typ.c Max.d
Analog Switch
Analog Signal Rangee
Vanalog
RDS(on)
Full
0
V+
V
On Resistance
RDS(on)
V+ = 3.15 V, ISX = 10 mA, VDX = 1.0 V
Room
2.8
5.5
Full
6
RON Match
R
(on)
V+ = 3.15 V, ISX = 10 mA, VDX = 1.0 V
Room
0.3
RON Resistance Flatness
R(on) Flatness
V+ = 3.15 V, ISX = 10 mA, VDX = 0.0 V, 1.0 V
Room
0.6
Channel-Off Leakage Current
ISX(off)
V+ = 3.6 V, VSX = 0.5 V/3 V, VDX = 3 V/0.5 V
Room
- 5
5
nA
IDX(off)
Full
- 10
10
Channel-On Leakage Current
IDX(on)
V+ = 3.6 V, VSX, VDX = 3 V/0.5 V
Room
- 10
10
Full
- 20
20
Digital Control
Input High Voltage
VINH
Full
1.65
V
Input Low Voltage
VINL
0.4
Input Current
IINL or IINH
VIN = 0 or V+
- 1
1
A
Input Capacitance
CIN
V+ = 3.15, f = 1 MHz
5.1
pF
Dynamic Characteristics
Break-Before-Make Time
tBBM
VSX = 1.5 V, RL = 50 , CL = 35 pF
Room
1
ns
Full
5
Enable Turn-On Time
tON(EN)
Room
20
45
Full
55
Enable Turn-Off Time
tOFF(EN)
Room
15
35
Full
45
Transition Time
tTRANS
Room
35
55
Full
65
Charge Injectiond
QINJ
CL = 1 nF, RGEN = 0 , VSX = 2 V
Room
- 14
pC
Off-Isolationd
OIRR
V+ = 3.15 V, f = 1 MHz, RL = 50 , CL = 5 pF
Room
- 70
dB
Crosstalkd, f
XTALK
- 90
Bandwidthd
BW
V+ = 3.15 V, RL = 50 , CL = 5 pF, - 3 dB
Room
120
MHz
Total Harmonic Distortiond
THD
V+ = 3.15 V, Rload = 600
Room
0.02
%
SX, DX Off Capacitance
d
CS(off)
V+ = 3.15 V, f = 1 MHz
Room
16
pF
CDX(off)
42
Channel-On Capacitanced
CDX(on)
49
Power Supply
Power Supply Range
V+
1.65
4.3
V
Power Supply Current
I+
VIN = 0 V or V+
Full
1
A
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