參數(shù)資料
型號(hào)： DG2599DN-T1-GE4
廠商： Vishay Siliconix
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 0K
描述： IC SWITCH
標(biāo)準(zhǔn)包裝： 3,000
功能： 開(kāi)關(guān)
電路： 2 x DPDT
導(dǎo)通狀態(tài)電阻： 1.1 歐姆
電壓電源： 單電源
電壓 - 電源，單路/雙路(±)： 1.65 V ~ 5.5 V
電流 - 電源： 1nA
安裝類型： 表面貼裝
封裝/外殼： 16-WFQFN
供應(yīng)商設(shè)備封裝： 16-迷你型QFN（1.8x2.6）
包裝： 帶卷 (TR)
www.vishay.com
2
Document Number: 67667
S11-1029-Rev. C, 23-May-11
Vishay Siliconix
DG2599
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.6 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guar-
anteed and is not required to ensure adequate bottom side solder interconnection.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Reference to GND
V+
- 0.3 to 5
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Current (any terminal except NO, NC or COM)
30
mA
Continuous Current (NO, NC, or COM)
± 300
Peak Current (pulsed at 1 ms, 10 % duty cycle)
± 500
Storage Temperature (D Suffix)
- 65 to 150
°C
Package Solder Reflow Conditionsd
miniQFN16
250
Power Dissipation (Packages)b
miniQFN16c
525
mW
ELECTRICAL CHARACTERISTICS (V+ = 3 V)
Parameter
Test Conditions
Temp.
Min.
Typ.
Max.
Unit
Power Supply and Signal
V+ Supply Voltage
Full
1.65
5
V
V+ Supply Current
VIN = 0 or V+
Full
0.001
2
A
Analog Signal Range
Full
0
V+
V
Switch On-Resistance and Leakage
Drain-Source On-Resistance
V+ = 3 V, INO/NC = 100 mA, VCOM = 0.9 V, 2.3 V
Room
2.8
3.3
Full
3.6
On-Resistance Flatness
V+ = 3 V, INO/NC = 100 mA, VCOM = 0 to V+
Room
0.24
1.1
Full
1.3
Switch Off Leakage Current
V+ = 4.3 V, VNO/NC = 0.3 V/4 V, VCOM = 4 V / 0.3 V
Room
- 10
0.1
10
nA
Full
- 100
100
Channel On-Leakage Current
V+ = 4.3 V, VNO/NC and VCOM = 0.3 V / 4 V
Room
- 10
0.1
10
Full
- 100
100
Digital Control
Input, High Voltage
V+ = 4.3 V
Full
1.6
V
V+ = 3 V
1.3
Input, Low Voltage
V+ = 4.3 V
Full
0.6
V+ = 3 V
0.5
Input, Bias Current
VIN = V+
Full
- 1
0.01
1
A
Dynamic Characteristics
Turn On-Time
VCOM or VNO/NC = 3 V, RL = 50 , CL = 35 pF
Room
90
ns
Full
115
Turn Off-Time
VCOM or VNO/NC = 3 V, RL = 50 , CL = 35 pF
Room
70
Full
85
Break Before Make Time
VCOM or VNO/NC = 3 V, RL = 50 , CL = 35 pF
Room
2
Full
2
Charge Injection
CL = 1 nF, RGEN = 0
Room
± 10
pC
Off Isolation
RL = 50 , CL = 5 pF, f = 1 MHz
- 66
dB
Crosstalk
RL = 50 , CL = 5 pF, f = 1 MHz
Non-adjacent channels
- 110
3dB Bandwith
CL = 5 pF, RL = 50
186
MHz
Source Off Capacitance
VIN = 0 or V+, f = 1 MHz
9
pF
Channel On Capacitance
VIN = 0 or V+, f = 1 MHz
26
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