參數(shù)資料
型號(hào)： DG2522DN-T1-E4
廠商： Vishay Siliconix
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 0K
描述： IC SWITCH SP3T FAULT 8-MINIQFN
標(biāo)準(zhǔn)包裝： 1
功能： 開(kāi)關(guān)
電路： 1 x SP3T
導(dǎo)通狀態(tài)電阻： 1.1 歐姆
電壓電源： 單電源
電壓 - 電源，單路/雙路(±)： 1.6 V ~ 5.5 V
電流 - 電源： 1µA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 8-UFQFN
供應(yīng)商設(shè)備封裝： 8-迷你型QFN（1.4x1.4）
包裝： 標(biāo)準(zhǔn)包裝
其它名稱： DG2522DN-T1-E4DKR
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
www.vishay.com
3
Vishay Siliconix
DG2522
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS V+ = 5 V
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %,VIN = 0.6 V or 1.8 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
Vanalog
RDS(on)
Full
0
V+
V
On-Resistance
RDS(on)
V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V
Room
0.8
1.1
Ω
V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V
Full
1.5
RON Match
ΔR
ON
V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V
Room
0.1
RON Resistance Flatness
RON
flatness
V+ = 4.5 V, ISX = 100 mA,
VCOM = 0.5 V, 2.5 V
Room
0.2
0.6
Switch Off Leakage
Current
ISX(off)
V+ = 5.5 V, VSX = 1 V/4.5 V,
VCOM = 4.5 V/1 V
Room
- 20
20
nA
Full
- 120
120
ICOM(off)
Room
- 20
20
Full
- 120
120
Channel-On Leakage
Current
ICOM(on)
V+ = 4.3 V, VSX = VCOM = 4.5 V/1 V
Room
Full
- 20
20
- 120
120
Power Down Leakage
V+ = 0 V, VSX = 0 V/5.5 V, VCOM = 5.5 V/0 V
Room
- 1
0.001
1
A
Full
- 25
25
Digital Control
Input High Voltage
VINH
V+ = 2.7 V
Full
1.6
V
V+ = 4.5 V
Full
1.8
Input Low Voltage
VINL
Full
0.6
Input Capacitance
CIN
f = 1 MHz, VINx = 0 V
Room
5
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
- 1
1
A
Dynamic Characteristics
Break-Before-Make Timee
tBBM
V+ = 5.0 V, VSX = V+,
RL = 50 Ω, CL = 35 pF (see figure 2)
Room
8
ns
Full
14
Enable Turn-On Timee
tON
V+ = 5.0 V, VSX = V+,
RL = 50 Ω, CL = 35 pF (see figure 1)
Room
53
75
Full
85
Enable Turn-Off Timee
tOFF
Room
40
60
Full
70
Charge Injectiond
Q
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
Room
27
pC
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
- 59
dB
Crosstalkd
XTALK
RL = 50 Ω, CL = 5 pF, f = 1 MHz
- 64
- 3 dB Bandwidthd
BW
RL = 50 Ω, CL = 5 pF
Room
105
MHz
Source Off Capacitanced
CSX(off)
f = 1 MHz, VNX = 0 V
Room
17
pF
Drain Off Capacitanced
CCOM(off)
f = 1 MHz, VCOM = 0 V
Room
51
Drain On Capacitanced
CCOM(on)
f = 1 MHz, VCOM = VNX = 0 V
Room
70
Total Harmonic Distortiond
THD
V+ = 5 V, VIN = 1 VRMS, RL = 600 Ω
f = 20 Hz to 20 kHz
Room
0.008
%
Power Supply
Power Supply Range
V+
1.6
5.5
V
Power Supply Current
I+
VIN = 0 or V+
Full
1.0
A
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