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參數(shù)資料
| 型號： | DFH10TN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | DFH10TN |
53098HA (KT)/7067AT, TS No.2374-1/2
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number:EN2374
DFH10T
Diffused Junction Type Silicon Diode
1.0A Power Rectifier
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Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
1175
[DFH10T]
Features
· High-speed switching use.
· Plastic molded structure.
· Reverse recovery time trr=0.15
μ
s max (B, C, E, G).
trr=0.3
μ
s max (J, L, N, R).
· Peak reverse voltage:V
RM
=100 to 1500V
· Average rectified current I
O
=1.0A
C:Cathode
A:Anode
C
C
Ta=25C
Ta=25C
Electrical Characteristics
at Ta = 25C
Reverse Recovery Time Test Circuit
Unit (resistance:
, capacitance:F)
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μ
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,
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