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參數(shù)資料
| 型號(hào)： | DF3A8.2FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產(chǎn)品使用，但對(duì)靜電放電（ESD保護(hù)） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 138K |
| 代理商： | DF3A8.2FV |
DF3A8.2FV
2007-11-01
2
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
30kV
Criterion: No damage to device elements
Marking
Equivalent Circuit
(top view)
Zener voltage V
Z
(V)
I
Z
– V
Z
Z
Z
15
11
8
10
6
7
14
5
12
13
1
μ
10
μ
10 m
100 m
9
100
μ
1 m
CT - VR
10
100
0
2
4
6
8
10
Ta=25°C
f=1MHz
T
REVERSE VOLTAGE VR (V)
8.2
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| DF3A8.2LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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