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參數(shù)資料
| 型號： | DF3A6.8LFV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產(chǎn)品使用，但對靜電放電（ESD）保護(hù)。 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 130K |
| 代理商： | DF3A6.8LFV |
DF3A6.8LFV
2007-11-01
2
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
8 kV
Criterion: No damage to device elements
Marking
Equivalent Circuit
(top view)
I
Z
– V
Z
Zener voltage V
Z
(V)
Z
Z
0
1
8
10
6
7
4
5
2
3
1
μ
10
μ
10 m
100 m
9
100
μ
1 m
CU
Q1
Q2
C
T
– V
R
0
5
8
7
6
2
1
10
3
4
Ta
=
25°C
f
=
1 MHz
1
Reverse voltage V
R
(V)
T
T
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| DF3A6 | DIODES (DIODES FOR PROTECTING AGAINST ESD) |
| DF3A8.2FE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.10 to 2.40; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF5A3.3JE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.30 to 2.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A8.2FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A8.2FV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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