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參數(shù)資料
| 型號： | DF3A6.2FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產(chǎn)品使用，但對靜電放電（ESD）保護。 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 167K |
| 代理商： | DF3A6.2FE |
DF2S12S
2007-11-01
2
Marking Equivalent Circuit
(Top View)
ZENER VOLTAGE VZ (V)
Z
REVERSE VOLTAGE VR (V)
T
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DF2S16FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S16S | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.77 to 10.21; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S24FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.11 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S5.6FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S5.6S | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DF3A68FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODES (DIODES FOR PROTECTING AGAINST ESD) |
| DF3A68FUT1G | 制造商:ON Semiconductor 功能描述: |
| DF3A-6EP-2A | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
| DF3A-6EP-2C | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
| DF3A-6EP-2DS | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
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