參數(shù)資料
型號: DF2S6.8FS
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
中文描述: 產(chǎn)品使用,但對靜電放電(ESD)保護。
文件頁數(shù): 2/3頁
文件大小: 122K
代理商: DF2S6.8FS
DF2S6.8FS
2007-11-01
2
Guaranteed Level of Esd Immunity
Marking
Equivalent Circuit
(Top View)
7
Criterion: No damage to device elements
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±30kV
IZ - VZ
1
10
100
0
1
2
3
4
5
6
7
8
9
10
0.0
Ta=25°C
0
0.00
Z
ZENER VOLTAGE VZ (V)
CT - VR
1
10
100
0
2
4
6
8
f=1MHz
Ta=25°C
T
REVERSE VOLTAGE VR(V)
相關(guān)PDF資料
PDF描述
DF2S6.8S Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF2S8.2FS Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF2S8.2S Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF30JC6 SHOTTKY RECTIFIERS (SBD)
DF30NC15 Schottky Barrier Diode
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