參數(shù)資料
型號: DF2S5.6S
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
中文描述: 產品使用,但對靜電放電(ESD)保護。
文件頁數(shù): 2/3頁
文件大小: 125K
代理商: DF2S5.6S
DF2S5.6S
2007-11-01
2
CT - VR
1
10
100
0
1
2
3
4
5
6
f = 1MHz
Ta = 25°C
REVERSE VOLTAGE VR(V)
T
IZ - VZ
0
0
1
10
100
0
1
2
3
4
5
6
7
8
9
10
0.01
Ta = 25°C
0.1
Z
ZENER VOLTAGE VZ (V)
相關PDF資料
PDF描述
DF2S6.2FS Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF2S6.8FS Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF2S6.8S Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF2S8.2FS Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF2S8.2S Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
相關代理商/技術參數(shù)
參數(shù)描述
DF2S6.2FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD).
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DF2S6.2FSTPL3 制造商:Toshiba America Electronic Components 功能描述:TVS DIODE 5VWM
DF2S6.8CT(TPL3) 功能描述:ESD 抑制器 ZENER DIODE RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C
DF2S6.8FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD).