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參數(shù)資料
| 型號： | DF08S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.5 Ampere Bridge Rectifiers(1.5安培橋整流器) |
| 中文描述： | 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | SDIP-4 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 33K |
| 代理商： | DF08S |
D
DF005S-DF10S, Rev. A
DF005S - DF10S
1.5 Ampere Bridge Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1998 Fairchild Semiconductor Corporation
Features
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Low leakage.
Parameter
Device
Units
005S
50
35
50
01S
100
70
100
02S
200
140
200
04S
400
280
400
06S
600
420
600
08S
800
560
800
10S
1000
700
1000
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
V
V
V
DC Reverse Voltage
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25
°
C
(Rated V
R
)
T
A
= 125
°
C
5.0
500
μ
A
μ
A
Maximum Forward Voltage Drop,
per bridge
I
t rating for fusing
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
@ 1.0 A
t < 8.35 ms
1.1
10
25
V
A
2
Sec
pF
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
A
= 40
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
1.5
A
i
f(surge)
50
A
P
D
3.1
25
40
W
mW/
°
C
°
C/W
°
C
°
C
R
θ
JA
T
stg
T
J
-55 to +150
-55 to +150
SDIP
0.060 (1.524)
0.040 (1.016)
+
0.135 (3.429)*
0.115 (2.921)*
0.008 (0.203)
0.004 (0.102)
0.410 (10.414)
0.360 ( 9.144)
0.310 (7.874)
0.290 (7.366)
0.009 (0.229)
Typical
0.205 (5.207)
0.195 (4.953)
0.042 (1.067)
0.038 (0.965)
0.255 (6.477)
0.245 (6.223)
0.335 (8.509)
0.320 (8.128)
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
Dimensions are in:
inches (mm)
Discrete POWE R & Signal
Technologies
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DF005S | 1 AMP SURFACE MOUNT GLASS PASSIVATED SILICON BRIDGE |
| DF005S | SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIER |
| DF10S | SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIER |
| DF005S | 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER |
| DF005S-T3 | 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DF08S | 制造商:Fairchild Semiconductor Corporation 功能描述:Bridge Rectifier 制造商:Fairchild Semiconductor Corporation 功能描述:BRIDGE RECTIFIER, 1PH 1.5A 800V SMD |
| DF08S/27 | 功能描述:RECTIFIER BRIDGE 1A 800V 4SMD RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 橋式整流器 系列:- 產(chǎn)品變化通告:Product Discontinuation 14/Mar/2011 標(biāo)準(zhǔn)包裝:1,500 系列:- 電壓 - 峰值反向(最大):1000V 電流 - DC 正向(If):1.5A 二極管類型:單相 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時間(trr):- 安裝類型:表面貼裝 封裝/外殼:4-SMD 包裝:帶卷 (TR) 供應(yīng)商設(shè)備封裝:4-SDIP |
| DF08S/45 | 功能描述:橋式整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| DF08S/77 | 功能描述:橋式整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| DF08S_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
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