參數(shù)資料
型號: DF02M
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 1.5 Ampere Bridge Rectifiers(1.5安培橋整流器)
中文描述: 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: DIP-4
文件頁數(shù): 1/2頁
文件大?。?/td> 33K
代理商: DF02M
D
DF005M - DF10M
1.5 Ampere Bridge Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Discrete POWE R & Signal
Technologies
1998 Fairchild Semiconductor Corporation
Features
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Low leakage.
Parameter
Device
Units
005M
50
35
50
01M
100
70
100
02M
200
140
200
04M
400
280
400
06M
600
420
600
08M
800
560
800
10M
1000
700
1000
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
V
V
V
DC Reverse Voltage
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25
°
C
(Rated V
R
)
T
A
= 125
°
C
5.0
500
μ
A
μ
A
Maximum Forward Voltage Drop,
per bridge
I
t rating for fusing
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
@ 1.0 A
t < 8.35 ms
1.1
10
25
V
A
2
Sec
pF
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
A
= 40
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
1.5
A
i
f(surge)
50
A
P
D
3.1
25
40
W
mW/
°
C
°
C/W
°
C
°
C
R
θ
JA
T
stg
T
J
-55 to +150
-55 to +150
DIP
+
0.315 (8.001)
0.285 (7.239)
0.255 (6.477)
0.245 (6.223)
0.075 (1.905)
0.055 (1.397)
0.335 (8.509)
0.320 (8.128)
0.350 (8.890)
0.300 (7.620)
0.185 (4.699)**
0.150 (3.810)**
0.130 (3.302)*
0.120 (3.408)*
0.205 (5.207)
0.195 (4.953)
0.045 (1.143)
0.035 (0.889)
0.022 (0.559)
0.018 (0.457)
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
LEAD - - 0.080 (2.032)**
0.050 (1.270)**
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