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參數(shù)資料
| 型號： | DESC29-06AC |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface |
| 中文描述： | HiPerFRED外延二極管ISOPLUS220電隔離背面 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | DESC29-06AC |
HiPerFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
μ
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
V
RRM
= 600 V
t
rr
= 35 ns
= 2x15 A
V
RSM
V
V
RRM
V
Type
600
600
DSEC29-06AC
2000 IXYS All rights reserved
DSEC29-06AC
ADVANCE TECHNICAL INFORMATION
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
35
15
A
A
T
C
= 140°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
110
A
T
VJ
= 25°C; non-repetitive
I
AS
= 0.9 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
0.1
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight
0.1
A
-55...+175
175
-55...+150
°C
°C
°C
T
C
= 25°C
95
W
50/60 Hz RMS; I
ISOL
≤
1 mA
2500
V~
Mounting force
11...65 / 2.4...11
N / lb
typical
3
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
V
R
= V
RRM
100
0.5
μA
mA
V
F
I
F
= 15 A;
T
VJ
= 150°C
T
VJ
= 25°C
1.49
2.04
V
V
R
thJC
R
thCH
t
rr
1.6
K/W
K/W
0.6
I
F
= 1 A; -di/dt = 100 A/μs;
V
R
= 30 V; T
VJ
= 25°C
35
ns
I
RM
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
4
4.9
A
3
1
2
98785 (12/00)
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