參數(shù)資料
型號(hào)： DEMO-ATF-5X143C
英文描述： Demonstration circuit board for ATF-54143 and ATF-55143
中文描述： 論證亞歐信托基金電路板- 54143和ATF - 55143
文件頁數(shù)： 3/8頁
文件大?。?/td> 70K
代理商： DEMO-ATF-5X143C
3
AT-32063 Characterization Information, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
Units
Typ.
P
1 dB
Power at 1 dB Gain Compression (opt tuning); V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dBm
12
G
1 dB
Gain at 1 dB Gain Compression (opt tuning); V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dB
16
IP
3
Output Third Order Intercept Point (opt tuning); V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dBm
24
Typical Performance, T
A
= 25
°
C
0
0.50
1.00
2.00
1.50
0.9
1.8
2.4
N
(
FREQUENCY (GHz)
Figure 2. Minimum Noise Figure vs.
Frequency and Current at V
CE
= 2.7 V.
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
0
5.0
10.0
20.0
15.0
0.9
1.8
2.4
G
(
FREQUENCY (GHz)
Figure 3. Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
10
11
12
15
13
14
0.9
1.8
2.4
P
(
FREQUENCY (GHz)
Figure 4. Power at 1 dB Gain
Compression vs. Frequency at
V
CE
= 2.7 V and I
C
= 20 mA.
0
5
10
15
25
20
0
0.5
1.0
1.5
2.0
2.5
I
3
(
FREQUENCY (GHz)
Figure 6. Third Order Intercept vs.
Frequency and Bias at V
CE
= 2.7 V, with
Optimal Tuning.
2 mA
5 mA
10 mA
20 mA
0
3
6
18
15
9
12
0.9
1.8
2.4
G
(
FREQUENCY (GHz)
Figure 5. 1 dB Compressed Gain vs.
Frequency at V
CE
= 2.7 V and
I
C
= 20 mA.
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