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參數(shù)資料
| 型號： | DEMO-AT3XX33 |
| 英文描述： | 900 MHz single stage LNA amplifier using AT-32033; circuit can also be used for AT-30533 or AT-31033 |
| 中文描述： | 900兆赫單級放大器，低噪聲放大器使用AT - 32033;電路也可以使用的AT - 30533或AT - 31033 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | DEMO-AT3XX33 |
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
1.1 dB NF, 14.5 dB G
A
Characterized for End-of-
Life Battery Use ( 2.7 V)
SOT-363 ( SC-70) Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
AT-32063
Description
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
B
1
1
E
1
2
C
2
3
C
1
6
E
2
5
B
2
4
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz f
t
, 30
GHz f
max
Self-Aligned-Transistor
(SAT) process. The die are nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
II
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DEMO-ATF3616-3 | 2 to 2.4 GHz single stage LNA using ATF-36163 |
| DEMO-ATF3X14-32 | Single stage 2 GHz LNA demonstration board for ATF-3x143 series ultra low noise PHEMTs |
| DEMO-ATF3X14-33 | Evaluation board for the ATF-3X143 on 900 MHz and 1930-1990 MHz frequencies |
| DEMO-ATF-5X143C | Demonstration circuit board for ATF-54143 and ATF-55143 |
| DEMO-ATF-5X1M4A | Demonstration circuit board for ATF-541M4 and ATF-551M4 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DEMO-ATF3616-3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 to 2.4 GHz single stage LNA using ATF-36163 |
| DEMO-ATF3X14-32 | 制造商:Avago Technologies 功能描述:DEMOBOARD FOR ATF-34/35/38/ (2HGZ) - Bulk |
| DEMO-ATF3X14-33 | 制造商:Avago Technologies 功能描述:DB FOR ATF-33(0.9-2G)/34143(0.9G) - Bulk |
| DEMO-ATF-3X1M4A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Demonstration circuit board for ATF-331M4 |
| DEMO-ATF-5X1431 | 制造商:Avago Technologies 功能描述:DEMOBOARD FOR ATF-54/55143 (5G) - Bulk |
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