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參數(shù)資料
| 型號： | DE275X2-501N16 |
| 廠商： | IXYS Corporation |
| 英文描述： | RF Power MOSFET |
| 中文描述： | 射頻功率MOSFET |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 78K |
| 代理商： | DE275X2-501N16 |
DE275X2-501N16A
RF Power MOSFET
Directed Energy, Inc.
IXYS
Company
An
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
min.
typ.
max.
R
G
0.3
C
iss
1800
pF
C
oss
V
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
150
pF
C
rss
45
pF
T
d(on)
3
ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
(External)
2
ns
T
d(off)
4
ns
T
off
5
ns
Q
g(on)
50
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
20
nC
Q
gd
30
nC
Source-Drain Diode
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
16
A
I
SM
Repetitive; pulse width limited by T
JM
96
A
V
SD
1.5
V
T
rr
200
ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
≤
2%
Q
RM
I
F
= I
S
, -di/dt = 100A/
μ
s,
V
R
= 100V
0.8
μ
C
I
RM
6.5
A
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
(1)
For detailed device mounting and installation instructions, see the “
DE-
Series MOSFET Mounting Instructions
” technical note on DEI’s web site at
www.directedenergy.com/apptech.htm
These parameters apply to the package, not individual MOSFET devices.
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