參數(shù)資料
型號： DE150-201N09A
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： RF Power MOSFET
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： D1, 6 PIN
文件頁數(shù)： 2/3頁
文件大?。?/td> 87K
代理商： DE150-201N09A
DE150-201N09A
RF Power MOSFET
Directed Energy, Inc.
IXYS
Company
An
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
typ.
max.
R
G
5
C
iss
600
pF
C
oss
V
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
105
pF
C
rss
12
pF
T
d(on)
4
ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
(External)
4
ns
T
d(off)
4
ns
T
off
4
ns
Q
g(on)
16
39
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
3.0
5.7
nC
Q
gd
8.0
20
nC
R
thJHS
1.5
K/W
Source-Drain Diode
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
9.0
A
I
SM
Repetitive; pulse width limited by T
JM
54
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
≤
2%
1.4
V
T
rr
450
ns
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DE150-501N04-00 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
DE-150-501N04A 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 500V 4.5A 6-Pin
DE150-501N04A 制造商:IXYS Corporation 功能描述:MOSFET N RF DE150 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, DE150 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, 500V, DE150; Transistor Type:RF MOSFET; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Power Dissipation Pd:200W; Operating Temperature Min:-55C; Operating Temperature Max:175C; No. of Pins:6 ;RoHS Compliant: Yes
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