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參數(shù)資料
| 型號(hào)： | DE150-101N09A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | RF Power MOSFET |
| 中文描述： | 射頻功率MOSFET |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 96K |
| 代理商： | DE150-101N09A |
DE150-101N09A
RF Power MOSFET
Directed Energy, Inc.
IXYS
Company
An
Directed Energy, Inc.
An
IXYS
Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
201N09A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device, Rds is the resistive leakage term.
The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are mod-
eled with reversed biased diodes. This provides a varactor type response nec-
essary for a high power device model. The turn on delay and the turn off delay
are adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
*SYM=POWMOSN
.SUBCKT 101N09A 10 20 30
* TERMINALS: D G S
* 100 Volt 9 Amp .16 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 .6N
RD 4 1 .16
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=500 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=500 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0242 Rev 1
2001 Directed Energy, Inc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DE150-102N02-00 | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 2A I(D) |
| DE375-102N30-00 | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 30A I(D) |
| DE375-301N40-00 | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 40A I(D) |
| DE150-201N09A | RF Power MOSFET |
| DE150-501N04A | N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DE150-102N02-00 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 2A I(D) |
| DE150-102N02A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET |
| DE150-201N09-00 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D) |
| DE150-201N09A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:RF Power MOSFET |
| DE150-501N04-00 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D) |
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