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參數(shù)資料
| 型號： | DDTD114TC-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
| 中文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 69K |
| 代理商： | DDTD114TC-7 |
DS30384 Rev. 4 - 2
2 of 3
DDTD (xxxx) C
www.diodes.com
Characteristic
Symbol
Min
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
Typ
Max
Unit
Test Condition
Input Voltage
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
V
l(off)
V
V
CC
= 5V, I
O
= 100 A
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
V
l(on)
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
0.3V
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
0.5
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 10mA
V
O
= 0.3V, I
O
= 30mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
l
= -50mA/-2.5mA
Output Voltage
V
O(on)
V
Input Current
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
I
l
mA
V
I
= 5V
Output Current
I
O(off)
A
V
CC
= 50V, V
I
= 0V
DC Current Gain
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
G
l
33
39
47
56
47
56
56
56
V
O
= 5V, I
O
= 50mA
Gain-Bandwidth Product*
f
T
200
MHz
V
= 10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics R1, R2 Types
@ T
A
= 25 C unless otherwise specified
N
* Transistor - For Reference Only
Electrical Characteristics R1-Only, R2-Only Types
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
BV
CBO
BV
CEO
Min
50
40
Typ
Max
Unit
V
V
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
I
C
= 50 A
I
C
= 1mA
I
E
= 50 A
I
E
= 50 A
I
E
= 50 A
I
E
= 720 A
V
CB
= 50V
Emitter-Base Breakdown Voltage DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
BV
EBO
5
V
Collector Cutoff Current
I
CBO
0.5
0.5
0.5
0.5
580
0.3
600
600
600
A
Emitter Cutoff Current
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
I
EBO
300
A
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
I
C
= 50mA, I
B
= 2.5mA
DC Current Transfer Ratio
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
h
FE
100
100
100
56
250
250
250
I
C
= 5mA, V
CE
= 5V
Gain-Bandwidth Product*
f
T
200
MHz
V
= 10V, I
E
= -5mA,
f = 100MHz
* Transistor - For Reference Only
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DDTD114TC-7-F | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTD114TU | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR |
| DDTD114TU-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 10KW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTD114TU-7-F | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTD122JC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
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