參數(shù)資料
型號: DDC143TK-7
廠商: DIODES INC
元件分類: 功率晶體管
英文描述: NPN PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR
中文描述: 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-6
文件頁數(shù): 2/5頁
文件大?。?/td> 85K
代理商: DDC143TK-7
DS30348 Rev. 2 - 2
2 of 5
DDC (xxxx) K
Characteristic
Symbol
Min
0.5
0.5
0.3
0.5
0.5
Typ
1.1
1.1
Max
Unit
Test Condition
Input Voltage
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
V
l(off)
1.1
1.9
1.9
V
V
CC
= 5V, I
O
= 100 A
V
l(on)
1.9
3.0
3.0
1.4
1.1
3.0
V
O
= 0.3, I
O
= 5mA
V
O
= 0.3, I
O
= 2mA
V
O
= 0.3, I
O
= 1mA
V
O
= 0.3, I
O
= 5mA
V
O
= 0.3, I
O
= 10mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 10mA / 0.5mA
Output Voltage
V
O(on)
0.1
0.3
V
Input Current
I
l
0.36
0.18
0.88
3.6
0.88
0.5
mA
V
I
= 5V
Output Current
I
O(off)
A
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 5mA
DC Current Gain
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
G
l
56
68
68
80
30
-30
-20
Input Resistor (R
1
) Tolerance
Resistance Ratio Tolerance
R
1
+30
+20
%
R
2
/R
1
Gain-Bandwidth Product*
f
T
250
MHz
V
= 10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Characteristic (DDC143TK & DDC114TK only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
50
50
5
Typ
Max
Unit
V
V
V
A
A
Test Condition
I
C
= 50 A
I
C
= 1mA
I
E
= 50 A
V
CB
= 50V
V
EB
= 4V
0.5
0.5
Collector-Emitter Saturation Voltage
V
CE(sat)
0.3
V
I
C
/I
B
= 2.5mA / 0.25mA DDC143TK
I
C
/I
B
= 1mA / 0.1mA DDC114TK
I
C
= 1mA, V
CE
= 5V
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
h
FE
R
1
f
T
100
-30
250
600
+30
%
250
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
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