參數(shù)資料
型號： DDA143TK-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR
中文描述： 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-6
文件頁數(shù)： 2/4頁
文件大?。?/td> 83K
代理商： DDA143TK-7
DS30420 Rev. 1 - 2
2 of 4
DDA (xxxx) H
www.diodes.com
Characteristic
Symbol
Min
-0.5
-0.5
-0.5
-0.3
-0.5
-0.5
Typ
-1.1
-1.1
-1.1
Max
Unit
Test Condition
Input Voltage
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
V
l(off)
-1.1
-1.9
-1.9
-1.9
V
V
CC
= -5V, I
O
= -100 A
V
l(on)
1.9
-3.0
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -2mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -1mA
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -10mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -10mA / -0.5mA
Output Voltage
V
O(on)
-0.1
-0.3
V
Input Current
I
l
-0.36
-0.18
-1.8
-0.88
-3.6
-0.88
-0.5
mA
V
I
= -5V
Output Current
I
O(off)
A
V
CC
= -50V, V
I
= -0V
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
V
= -10V, I
E
= -5mA,
f = 100MHz
DC Current Gain
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
G
l
56
68
20
68
80
30
Gain-Bandwidth Product*
f
T
250
MHz
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Characteristic (DDA143TH & DDA114TH only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-50
-50
-5
Typ
Max
Unit
V
V
V
A
A
Test Condition
I
C
= -50 A
I
C
= -1mA
I
E
= -50 A
V
CB
= -50V
V
EB
= -4V
-0.5
-0.5
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3
V
I
C
/I
B
= -2.5mA / -0.25mA DDA143TH
I
C
/I
B
= -1mA / -0.1mA DDA114TH
I
C
= -1mA, V
CE
= -5V
V
CE
= -10V, I
E
= 5mA, f = 100MHz
DC Current Transfer Ratio
Gain-Bandwidth Product*
h
FE
f
T
100
250
250
600
MHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DDA143TK-7-F 功能描述:開關(guān)晶體管 - 偏壓電阻器 300MW 4.7KW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DDA143TU 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DDA143TU-7 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL PNP 200mW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DDA143TU-7-F 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL PNP 200mW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DDA144EH 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
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