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參數(shù)資料
| 型號(hào)： | DDA122TH |
| 廠商： | Diodes Inc. |
| 英文描述： | PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 進(jìn)步黨預(yù)偏置信號(hào)小的SOT - 563雙表面貼裝晶體管 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | DDA122TH |
DS30427 Rev. 3 - 2
2 of 3
DDA (LO-R1) H
www.diodes.com
Characteristic
Symbol
Min
-0.3
-0.3
Typ
Max
Unit
Test Condition
Input Voltage
DDA122LH
DDA142JH
V
l(off)
V
V
CC
= -5V, I
O
= -100 A
DDA122LH
DDA142JH
V
l(on)
-2.0
-2.0
-0.3V
-28
-13
-0.5
V
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
l
= -5mA/-0.25mA
Output Voltage
V
O(on)
V
Input Current
DDA122LH
DDA142JH
I
l
mA
V
I
= -5V
Output Current
I
O(off)
A
V
CC
= -50V, V
I
= 0V
DC Current Gain
DDA122LH
DDA142JH
G
l
56
56
V
O
= -5V, I
O
= -10mA
Gain-Bandwidth Product*
f
T
200
MHz
V
= -10V, I
E
= -5mA,
f = 100MHz
Electrical Characteristics R1, R2 Types
@ T
A
= 25 C unless otherwise specified
* Transistor - For Reference Only
Characteristic
Symbol
BV
CBO
BV
CEO
Min
-50
-40
Typ
Max
Unit
V
V
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDA122TH
I
C
= -50 A
I
C
= -1mA
I
E
= -50 A
I
E
= -50 A
V
CB
= -50V
DDA142TH
BV
EBO
-5
V
Collector Cutoff Current
I
CBO
-0.5
-0.5
-0.5
-0.3
600
600
A
Emitter Cutoff Current
DDA122TH
DDA142TH
I
EBO
A
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
I
C
= -5mA, I
B
= -0.25mA
DC Current Transfer Ratio
DDA122TH
DDA142TH
h
FE
100
100
250
250
I
C
= -1mA, V
CE
= -5V
Gain-Bandwidth Product*
f
T
200
MHz
V
= -10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics R1-Only Types
@ T
A
= 25 C unless otherwise specified
* Transistor - For Reference Only
XXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
PXXYM
Marking Information
Device
DDA122LH-7
DDA142JH-7
DDA122TH-7
DDA142TH-7
Packaging
SOT-563
SOT-563
SOT-563
SOT-563
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Ordering Information
(Note 4)
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Date Code Key
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Year
Code
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DDA122TH-7 | PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
| DDA142JH | PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
| DDA142JH-7 | PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
| DDA142TH | PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
| DDA142TH-7 | PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DDA122TH-7 | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 150MW 0.22K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDA122TH-7-F | 制造商:Diodes Incorporated 功能描述:TRANS DGTL BJT PNP 40V 100MA 6PIN SOT-563 - Tape and Reel |
| DDA122TU | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| DDA122TU-7 | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 200MW 0.22K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDA122TU-7-F | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 200MW 0.22K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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