參數(shù)資料
型號(hào)： DDA114TU
廠商： Diodes Inc.
英文描述： PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR
中文描述： 進(jìn)步黨預(yù)偏置信號(hào)小的SOT - 63表面貼裝晶體管雙
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 86K
代理商： DDA114TU
DS30349 Rev. 2 - 2
2 of 5
DDA (xxxx) K
Characteristic
Symbol
Min
-0.5
-0.5
-0.3
-0.5
-0.5
Typ
-1.1
-1.1
Max
Unit
Test Condition
Input Voltage
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
V
l(off)
-1.1
-1.9
-1.9
V
V
CC
= -5V, I
O
= -100 A
V
l(on)
-1.9
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -2mA
V
O
= -0.3, I
O
= -1mA
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -10mA
I
O
/I
l
= -10mA /- 0.5mA
I
O
/I
l
= -10mA /- 0.5mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -10mA / -0.5mA
Output Voltage
V
O(on)
-0.1
-0.3
V
Input Current
I
l
-0.36
-0.18
-0.88
-3.6
-0.88
-0.5
mA
V
I
= -5V
Output Current
I
O(off)
A
V
CC
= 50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
DC Current Gain
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
G
l
56
68
68
80
30
-30
-20
Input Resistor (R
1
) Tolerance
Resistance Ratio Tolerance
R
1
+30
+20
%
R
2
/R
1
Gain-Bandwidth Product*
f
T
250
MHz
V
= -10V, I
E
= -5mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Characteristic (DDA143TK & DDA114TK only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-50
-50
-5
Typ
Max
Unit
V
V
V
A
A
Test Condition
I
C
= -50 A
I
C
= -1mA
I
E
= -50 A
V
CB
= -50V
V
EB
= -4V
-0.5
-0.5
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3
V
I
C
/I
B
= -2.5mA /- 0.25mA DDA143TK
I
C
/I
B
= -1mA /- 0.1mA DDA114TK
I
C
= -1mA, V
CE
= -5V
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
h
FE
R
1
f
T
100
-30
250
600
+30
%
250
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
Notes:
Device
相關(guān)PDF資料
PDF描述
DDA114YH PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DDA114TU-7 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DDA114TU-7-F 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DDA114YH 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DDA114YH-7 功能描述:開關(guān)晶體管 - 偏壓電阻器 150MW 10K 47K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DDA114YH-7-F 制造商:Diodes Incorporated 功能描述:SMALL SIGNAL TRANSISTOR - Tape and Reel
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